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MRF6S21050LR3 MRF6S21050LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA
and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
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Typical 2-carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
= 450 mA,
Pout
= 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 16 dB
Drain Efficiency ? 27.7%
IM3 @ 10 MHz Offset ? -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? -40 dBc in 3.84 MHz Channel Bandwidth
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Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Output Power
Features
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Characterized with Series Equivalent Large-Signal Impedance Parameters
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Internally Matched for Ease of Use
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Qualified Up to a Maximum of 32 VDD
Operation
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Integrated ESD Protection
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Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
RθJC
1.16
1.28
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S21050L
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
MRF6S21050LR3
MRF6S21050LSR3
2110-2170 MHz, 11.5 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465F-04, STYLE 1
NI-400S
MRF6S21050LSR3
CASE 465E-04, STYLE 1
NI-400
MRF6S21050LR3
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Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
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